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bta08 s/a btb08 s/a sensitive gate triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) bta tc = 75 c8 a btb tc = 80 c i tsm non repetitive surge peak on-state current ( tj initial = 25 c) tp = 8.3 ms 84 a tp = 10 ms 80 i 2 ti 2 t value tp = 10 ms 32 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 50ma di g /dt = 0.1a/ m s repetitive f = 50 hz 10 a/ m s non repetitive 50 tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 110 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 c to220ab (plastic) . very low i gt = 10ma max . low i h = 25ma max . bta family : insulating voltage = 2500v (rms) (ul recognized : e81734) description symbol parameter bta / btb08- unit 400 s/a 600 s/a 700 s/a v drm v rrm repetitive peak off-state voltage tj = 110 c 400 600 700 v absolute ratings (limiting values) features the bta/btb08 s/a triac family are high perform- ance glass passivated pnpn devices. these parts are suitables for general purpose ap- plications where gate high sensitivity is required. application on 4q such as phase control and static switching. 2014-6-9 1 www.kersemi.com
gate characteristics (maximum values) symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc bta 4.4 c/w btb 3.2 rth (j-c) ac junction to case for 360 conduction angle ( f= 50 hz) bta 3.3 c/w btb 2.4 symbol test conditions quadrant suffix unit sa i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 10 10 ma iv max 10 25 v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii-iv max 1.5 v v gd v d =v drm r l =3.3k w tj=110 c i-ii-iii-iv min 0.2 v tgt v d =v drm i g = 40ma di g /dt = 0.5a/ m s tj=25 c i-ii-iii-iv typ 2 m s i l ig= 1.2 i gt tj=25 c i-iii-iv typ 20 20 ma ii 40 40 i h *i t = 100ma gate open tj=25 c max 25 25 ma v tm *i tm = 11a tp= 380 m s tj=25 c max 1.75 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.01 ma tj=110 c max 0.75 dv/dt * linear slope up to v d =67%v drm gate open tj=110 c min 10 10 v/ m s (dv/dt)c * (di/dt)c= 3.5a/ms tj=110 c typ 5 5 v/ m s * for either polarity of electrode a 2 voltage with reference to electrode a 1 . p g (av) =1w p gm = 10w (tp = 20 m s) i gm = 4a (tp = 20 m s) v gm = 16v (tp = 20 m s). electrical characteristics bta08 s/a / btb08 s/a thermal resistances 2014-6-9 1 www.kersemi.com
package i t(rms) v drm /v rrm sensitivity specification av s a bta (insulated) 8 400 x x 600 x x 700 x x btb (uninsulated) 400 x x 600 x x 700 x x fig.1 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (bta). fig.4 : rms on-state current versus case temperature. fig.3 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (btb). bta08 s/a / btb08 s/a ordering information 2014-6-9 3 www.kersemi.com
fig.6 : relative variation of gate trigger current and holding current versus junction temperature. fig.7 : non repetitive surge peak on-state current versus number of cycles. fig.8 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of i 2 t. fig.9 : on-state characteristics (maximum values). 1e-3 1e-2 1e-1 1e +0 1 e +1 1 e +2 5 e +2 0.01 0.1 1 zth/rth zt h( j-c) zth(j-a) tp(s) bta08 s/a / btb08 s/a fig.5 : relative variation of thermal impedance versus pulse duration. 2014-6-9 4 www.kersemi.com

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